Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with comple...

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Detalles Bibliográficos
Autores principales: Nozaki, Takayuki, Yamamoto, Tatsuya, Miwa, Shinji, Tsujikawa, Masahito, Shirai, Masafumi, Yuasa, Shinji, Suzuki, Yoshishige
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562605/
https://www.ncbi.nlm.nih.gov/pubmed/31096668
http://dx.doi.org/10.3390/mi10050327

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562605/
https://www.ncbi.nlm.nih.gov/pubmed/31096668
http://dx.doi.org/10.3390/mi10050327

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