Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To gu...

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Detalles Bibliográficos
Autores principales: Li, Hui, Yu, Renze, Zhong, Yi, Yao, Ran, Liao, Xinglin, Chen, Xianping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562836/
https://www.ncbi.nlm.nih.gov/pubmed/31083371
http://dx.doi.org/10.3390/mi10050314

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562836/
https://www.ncbi.nlm.nih.gov/pubmed/31083371
http://dx.doi.org/10.3390/mi10050314

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