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Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET
Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To gu...
Autores principales: | Li, Hui, Yu, Renze, Zhong, Yi, Yao, Ran, Liao, Xinglin, Chen, Xianping |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6562836/ https://www.ncbi.nlm.nih.gov/pubmed/31083371 http://dx.doi.org/10.3390/mi10050314 |
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