Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Here we report photoelectric-effect-enhanced interfacial charge transfer reactions. The electrochemical corrosion rate of n-type gallium arsenide (n-GaAs) induced by the contact potential at platinum (Pt) and GaAs boundaries can be accelerated by the photoelectric effect of n-GaAs. When a GaAs wafer...

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Detalles Bibliográficos
Autores principales: Guo, Chengxin, Zhang, Lin, Sartin, Matthew M., Han, Lianhuan, Tian, Zhao-Wu, Tian, Zhong-Qun, Zhan, Dongping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2019
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566067/
https://www.ncbi.nlm.nih.gov/pubmed/31360393
http://dx.doi.org/10.1039/c9sc01978b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566067/
https://www.ncbi.nlm.nih.gov/pubmed/31360393
http://dx.doi.org/10.1039/c9sc01978b

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