Graphene Schottky Junction on Pillar Patterned Silicon Substrate

A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room temperature and exhibits strongly bias- and tempera...

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Detalles Bibliográficos
Autores principales: Luongo, Giuseppe, Grillo, Alessandro, Giubileo, Filippo, Iemmo, Laura, Lukosius, Mindaugas, Alvarado Chavarin, Carlos, Wenger, Christian, Di Bartolomeo, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566384/
https://www.ncbi.nlm.nih.gov/pubmed/31027368
http://dx.doi.org/10.3390/nano9050659

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566384/
https://www.ncbi.nlm.nih.gov/pubmed/31027368
http://dx.doi.org/10.3390/nano9050659

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