Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives

Silsesquioxane (SQ) derivatives possessing intramolecular H(2)C = CH- groups and Si-H groups were designed as precursors for ternary silicon oxycarbide (SiOC). By using R-Si(OMe)(3), H-Si(OEt)(3) and (H-Si(Me)(2))(2)O as starting compounds, SQ derivatives of VH-SQ (R = vinyl) and St-H-SQ (R = stylyl...

Descripción completa

Detalles Bibliográficos
Autores principales: Iwase, Yoshiaki, Fuchigami, Teruaki, Horie, Yoji, Daiko, Yusuke, Honda, Sawao, Iwamoto, Yuji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566551/
https://www.ncbi.nlm.nih.gov/pubmed/31137852
http://dx.doi.org/10.3390/ma12101721

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566551/
https://www.ncbi.nlm.nih.gov/pubmed/31137852
http://dx.doi.org/10.3390/ma12101721

Ejemplares similares