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Formation and Thermal Behaviors of Ternary Silicon Oxycarbides derived from Silsesquioxane Derivatives
Silsesquioxane (SQ) derivatives possessing intramolecular H(2)C = CH- groups and Si-H groups were designed as precursors for ternary silicon oxycarbide (SiOC). By using R-Si(OMe)(3), H-Si(OEt)(3) and (H-Si(Me)(2))(2)O as starting compounds, SQ derivatives of VH-SQ (R = vinyl) and St-H-SQ (R = stylyl...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566551/ https://www.ncbi.nlm.nih.gov/pubmed/31137852 http://dx.doi.org/10.3390/ma12101721 |