The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO(X) as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel layer and multi-oxide structure of SiO(2) (blocking layer)/Si-rich SiO(...

Descripción completa

Detalles Bibliográficos
Autores principales: Park, Joong-Hyun, Shin, Myung-Hun, Yi, Jun-Sin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566947/
https://www.ncbi.nlm.nih.gov/pubmed/31121917
http://dx.doi.org/10.3390/nano9050784

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566947/
https://www.ncbi.nlm.nih.gov/pubmed/31121917
http://dx.doi.org/10.3390/nano9050784

Ejemplares similares