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The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO(X) as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel layer and multi-oxide structure of SiO(2) (blocking layer)/Si-rich SiO(...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6566947/ https://www.ncbi.nlm.nih.gov/pubmed/31121917 http://dx.doi.org/10.3390/nano9050784 |