Moisture effect on the diffusion of Cu ions in Cu/Ta(2)O(5)/Pt and Cu/SiO(2)/Pt resistance switches: a first-principles study

Cu/Ta(2)O(5)/Pt and Cu/SiO(2)/Pt are two of the most promising resistance switches. From experimental observations, it is speculated that the presence of H(2)O in the amorphous Ta(2)O(5) and SiO(2) (a-Ta(2)O(5) and a-SiO(2)) facilitates the rate-limiting step during the switching process. This rate-...

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Detalles Bibliográficos
Autores principales: Xiao, Bo, Watanabe, Satoshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2019
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567064/
https://www.ncbi.nlm.nih.gov/pubmed/31231448
http://dx.doi.org/10.1080/14686996.2019.1616222

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567064/
https://www.ncbi.nlm.nih.gov/pubmed/31231448
http://dx.doi.org/10.1080/14686996.2019.1616222

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