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Moisture effect on the diffusion of Cu ions in Cu/Ta(2)O(5)/Pt and Cu/SiO(2)/Pt resistance switches: a first-principles study
Cu/Ta(2)O(5)/Pt and Cu/SiO(2)/Pt are two of the most promising resistance switches. From experimental observations, it is speculated that the presence of H(2)O in the amorphous Ta(2)O(5) and SiO(2) (a-Ta(2)O(5) and a-SiO(2)) facilitates the rate-limiting step during the switching process. This rate-...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Taylor & Francis
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567064/ https://www.ncbi.nlm.nih.gov/pubmed/31231448 http://dx.doi.org/10.1080/14686996.2019.1616222 |