An Overview of Normally-Off GaN-Based High Electron Mobility Transistors

Today, the introduction of wide band gap (WBG) semiconductors in power electronics has become mandatory to improve the energy efficiency of devices and modules and to reduce the overall electric power consumption in the world. Due to its excellent properties, gallium nitride (GaN) and related alloys...

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Detalles Bibliográficos
Autores principales: Roccaforte, Fabrizio, Greco, Giuseppe, Fiorenza, Patrick, Iucolano, Ferdinando
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567103/
https://www.ncbi.nlm.nih.gov/pubmed/31096689
http://dx.doi.org/10.3390/ma12101599

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567103/
https://www.ncbi.nlm.nih.gov/pubmed/31096689
http://dx.doi.org/10.3390/ma12101599

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