Ge-Sb-Te Chalcogenide Thin Films Deposited by Nanosecond, Picosecond, and Femtosecond Laser Ablation

Ge-Sb-Te thin films were obtained by ns-, ps-, and fs-pulsed laser deposition (PLD) in various experimental conditions. The thickness of the samples was influenced by the Nd-YAG laser wavelength, fluence, target-to-substrate distance, and deposition time. The topography and chemical analysis results...

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Detalles Bibliográficos
Autores principales: Bulai, Georgiana, Pompilian, Oana, Gurlui, Silviu, Nemec, Petr, Nazabal, Virginie, Cimpoesu, Nicanor, Chazallon, Bertrand, Focsa, Cristian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567795/
https://www.ncbi.nlm.nih.gov/pubmed/31052395
http://dx.doi.org/10.3390/nano9050676

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6567795/
https://www.ncbi.nlm.nih.gov/pubmed/31052395
http://dx.doi.org/10.3390/nano9050676

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