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Shear-solvo defect annihilation of diblock copolymer thin films over a large area
Achieving defect-free block copolymer (BCP) nanopatterns with a long-ranged orientation over a large area remains a persistent challenge, impeding the successful and widespread application of BCP self-assembly. Here, we demonstrate a new experimental strategy for defect annihilation while conserving...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6570509/ https://www.ncbi.nlm.nih.gov/pubmed/31214653 http://dx.doi.org/10.1126/sciadv.aaw3974 |
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author | Kim, Ye Chan Shin, Tae Joo Hur, Su-Mi Kwon, Seok Joon Kim, So Youn |
author_facet | Kim, Ye Chan Shin, Tae Joo Hur, Su-Mi Kwon, Seok Joon Kim, So Youn |
author_sort | Kim, Ye Chan |
collection | PubMed |
description | Achieving defect-free block copolymer (BCP) nanopatterns with a long-ranged orientation over a large area remains a persistent challenge, impeding the successful and widespread application of BCP self-assembly. Here, we demonstrate a new experimental strategy for defect annihilation while conserving structural order and enhancing uniformity of nanopatterns. Sequential shear alignment and solvent vapor annealing generate perfectly aligned nanopatterns with a low defect density over centimeter-scale areas, outperforming previous single or sequential combinations of annealing. The enhanced order quality and pattern uniformity were characterized in unprecedented detail via scattering analysis and incorporating new mathematical indices using elaborate image processing algorithms. In addition, using an advanced sampling method combined with a coarse-grained molecular simulation, we found that domain swelling is the driving force for enhanced defect annihilation. The superior quality of large-scale nanopatterns was further confirmed with diffraction and optical properties after metallized patterns, suggesting strong potential for application in optoelectrical devices. |
format | Online Article Text |
id | pubmed-6570509 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2019 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-65705092019-06-18 Shear-solvo defect annihilation of diblock copolymer thin films over a large area Kim, Ye Chan Shin, Tae Joo Hur, Su-Mi Kwon, Seok Joon Kim, So Youn Sci Adv Research Articles Achieving defect-free block copolymer (BCP) nanopatterns with a long-ranged orientation over a large area remains a persistent challenge, impeding the successful and widespread application of BCP self-assembly. Here, we demonstrate a new experimental strategy for defect annihilation while conserving structural order and enhancing uniformity of nanopatterns. Sequential shear alignment and solvent vapor annealing generate perfectly aligned nanopatterns with a low defect density over centimeter-scale areas, outperforming previous single or sequential combinations of annealing. The enhanced order quality and pattern uniformity were characterized in unprecedented detail via scattering analysis and incorporating new mathematical indices using elaborate image processing algorithms. In addition, using an advanced sampling method combined with a coarse-grained molecular simulation, we found that domain swelling is the driving force for enhanced defect annihilation. The superior quality of large-scale nanopatterns was further confirmed with diffraction and optical properties after metallized patterns, suggesting strong potential for application in optoelectrical devices. American Association for the Advancement of Science 2019-06-14 /pmc/articles/PMC6570509/ /pubmed/31214653 http://dx.doi.org/10.1126/sciadv.aaw3974 Text en Copyright © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Kim, Ye Chan Shin, Tae Joo Hur, Su-Mi Kwon, Seok Joon Kim, So Youn Shear-solvo defect annihilation of diblock copolymer thin films over a large area |
title | Shear-solvo defect annihilation of diblock copolymer thin films over a large area |
title_full | Shear-solvo defect annihilation of diblock copolymer thin films over a large area |
title_fullStr | Shear-solvo defect annihilation of diblock copolymer thin films over a large area |
title_full_unstemmed | Shear-solvo defect annihilation of diblock copolymer thin films over a large area |
title_short | Shear-solvo defect annihilation of diblock copolymer thin films over a large area |
title_sort | shear-solvo defect annihilation of diblock copolymer thin films over a large area |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6570509/ https://www.ncbi.nlm.nih.gov/pubmed/31214653 http://dx.doi.org/10.1126/sciadv.aaw3974 |
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