A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime

This paper presents a physically valid quasi-ballistic drain current model applicable for nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model includes both diffusive and ballistic transport phenomena. The model considers the important positional carrier scattering depende...

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Detalles Bibliográficos
Autores principales: Murnal, Vyas R., Vijaya, C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Singapore 2019
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6571439/
https://www.ncbi.nlm.nih.gov/pubmed/31204436
http://dx.doi.org/10.1186/s40580-019-0189-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6571439/
https://www.ncbi.nlm.nih.gov/pubmed/31204436
http://dx.doi.org/10.1186/s40580-019-0189-y

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