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A quasi-ballistic drain current, charge and capacitance model with positional carrier scattering dependency valid for symmetric DG MOSFETs in nanoscale regime
This paper presents a physically valid quasi-ballistic drain current model applicable for nanoscale symmetric Double Gate (SDG) MOSFETs. The proposed drain current model includes both diffusive and ballistic transport phenomena. The model considers the important positional carrier scattering depende...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Singapore
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6571439/ https://www.ncbi.nlm.nih.gov/pubmed/31204436 http://dx.doi.org/10.1186/s40580-019-0189-y |