Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices

Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation efficiency of magnesium (Mg) ions and the inevitable surface decomposition during high-temperature activati...

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Detalles Bibliográficos
Autores principales: Shi, Ya-Ting, Ren, Fang-Fang, Xu, Wei-Zong, Chen, Xuanhu, Ye, Jiandong, Li, Li, Zhou, Dong, Zhang, Rong, Zheng, Youdou, Tan, Hark Hoe, Jagadish, Chennupati, Lu, Hai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584666/
https://www.ncbi.nlm.nih.gov/pubmed/31217468
http://dx.doi.org/10.1038/s41598-019-45177-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584666/
https://www.ncbi.nlm.nih.gov/pubmed/31217468
http://dx.doi.org/10.1038/s41598-019-45177-0

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