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Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices
Implementing selective-area p-type doping through ion implantation is the most attractive choice for the fabrication of GaN-based bipolar power and related devices. However, the low activation efficiency of magnesium (Mg) ions and the inevitable surface decomposition during high-temperature activati...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584666/ https://www.ncbi.nlm.nih.gov/pubmed/31217468 http://dx.doi.org/10.1038/s41598-019-45177-0 |