Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric

We report transport measurements of dual gated MoS(2) and WSe(2) devices using atomic layer deposition grown Al(2)O(3) as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated t...

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Detalles Bibliográficos
Autores principales: Lau, Chit Siong, Chee, Jing Yee, Thian, Dickson, Kawai, Hiroyo, Deng, Jie, Wong, Swee Liang, Ooi, Zi En, Lim, Yee-Fun, Goh, Kuan Eng Johnson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584693/
https://www.ncbi.nlm.nih.gov/pubmed/31217503
http://dx.doi.org/10.1038/s41598-019-45392-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584693/
https://www.ncbi.nlm.nih.gov/pubmed/31217503
http://dx.doi.org/10.1038/s41598-019-45392-9

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