Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric

We report transport measurements of dual gated MoS(2) and WSe(2) devices using atomic layer deposition grown Al(2)O(3) as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated t...

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Autores principales: Lau, Chit Siong, Chee, Jing Yee, Thian, Dickson, Kawai, Hiroyo, Deng, Jie, Wong, Swee Liang, Ooi, Zi En, Lim, Yee-Fun, Goh, Kuan Eng Johnson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584693/
https://www.ncbi.nlm.nih.gov/pubmed/31217503
http://dx.doi.org/10.1038/s41598-019-45392-9
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author Lau, Chit Siong
Chee, Jing Yee
Thian, Dickson
Kawai, Hiroyo
Deng, Jie
Wong, Swee Liang
Ooi, Zi En
Lim, Yee-Fun
Goh, Kuan Eng Johnson
author_facet Lau, Chit Siong
Chee, Jing Yee
Thian, Dickson
Kawai, Hiroyo
Deng, Jie
Wong, Swee Liang
Ooi, Zi En
Lim, Yee-Fun
Goh, Kuan Eng Johnson
author_sort Lau, Chit Siong
collection PubMed
description We report transport measurements of dual gated MoS(2) and WSe(2) devices using atomic layer deposition grown Al(2)O(3) as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
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spelling pubmed-65846932019-06-26 Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric Lau, Chit Siong Chee, Jing Yee Thian, Dickson Kawai, Hiroyo Deng, Jie Wong, Swee Liang Ooi, Zi En Lim, Yee-Fun Goh, Kuan Eng Johnson Sci Rep Article We report transport measurements of dual gated MoS(2) and WSe(2) devices using atomic layer deposition grown Al(2)O(3) as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics. Nature Publishing Group UK 2019-06-19 /pmc/articles/PMC6584693/ /pubmed/31217503 http://dx.doi.org/10.1038/s41598-019-45392-9 Text en © The Author(s) 2019, corrected publication 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Lau, Chit Siong
Chee, Jing Yee
Thian, Dickson
Kawai, Hiroyo
Deng, Jie
Wong, Swee Liang
Ooi, Zi En
Lim, Yee-Fun
Goh, Kuan Eng Johnson
Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric
title Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric
title_full Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric
title_fullStr Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric
title_full_unstemmed Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric
title_short Carrier control in 2D transition metal dichalcogenides with Al(2)O(3) dielectric
title_sort carrier control in 2d transition metal dichalcogenides with al(2)o(3) dielectric
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6584693/
https://www.ncbi.nlm.nih.gov/pubmed/31217503
http://dx.doi.org/10.1038/s41598-019-45392-9
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