Lasing in strained germanium microbridges

Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned by strain or alloying with Sn to become direct, as it was found to be required for interband semiconductor lasers. Here, we...

Descripción completa

Detalles Bibliográficos
Autores principales: Armand Pilon, F. T., Lyasota, A., Niquet, Y.-M., Reboud, V., Calvo, V., Pauc, N., Widiez, J., Bonzon, C., Hartmann, J. M., Chelnokov, A., Faist, J., Sigg, H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6586857/
https://www.ncbi.nlm.nih.gov/pubmed/31222017
http://dx.doi.org/10.1038/s41467-019-10655-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6586857/
https://www.ncbi.nlm.nih.gov/pubmed/31222017
http://dx.doi.org/10.1038/s41467-019-10655-6

Ejemplares similares