Lasing in strained germanium microbridges

Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned by strain or alloying with Sn to become direct, as it was found to be required for interband semiconductor lasers. Here, we...

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Detalles Bibliográficos
Autores principales: Armand Pilon, F. T., Lyasota, A., Niquet, Y.-M., Reboud, V., Calvo, V., Pauc, N., Widiez, J., Bonzon, C., Hartmann, J. M., Chelnokov, A., Faist, J., Sigg, H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6586857/
https://www.ncbi.nlm.nih.gov/pubmed/31222017
http://dx.doi.org/10.1038/s41467-019-10655-6

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