High-speed black phosphorus field-effect transistors approaching ballistic limit

As a strong candidate for future electronics, atomically thin black phosphorus (BP) has attracted great attention in recent years because of its tunable bandgap and high carrier mobility. Here, we show that the transport properties of BP device under high electric field can be improved greatly by th...

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Detalles Bibliográficos
Autores principales: Li, Xuefei, Yu, Zhuoqing, Xiong, Xiong, Li, Tiaoyang, Gao, Tingting, Wang, Runsheng, Huang, Ru, Wu, Yanqing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6588383/
https://www.ncbi.nlm.nih.gov/pubmed/31245534
http://dx.doi.org/10.1126/sciadv.aau3194

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6588383/
https://www.ncbi.nlm.nih.gov/pubmed/31245534
http://dx.doi.org/10.1126/sciadv.aau3194

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