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High-speed black phosphorus field-effect transistors approaching ballistic limit
As a strong candidate for future electronics, atomically thin black phosphorus (BP) has attracted great attention in recent years because of its tunable bandgap and high carrier mobility. Here, we show that the transport properties of BP device under high electric field can be improved greatly by th...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6588383/ https://www.ncbi.nlm.nih.gov/pubmed/31245534 http://dx.doi.org/10.1126/sciadv.aau3194 |