Role of hole confinement in the recombination properties of InGaN quantum structures

We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative transitions, a non-exponential decay of the emission...

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Detalles Bibliográficos
Autores principales: Anikeeva, M., Albrecht, M., Mahler, F., Tomm, J. W., Lymperakis, L., Chèze, C., Calarco, R., Neugebauer, J., Schulz, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6588636/
https://www.ncbi.nlm.nih.gov/pubmed/31227738
http://dx.doi.org/10.1038/s41598-019-45218-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6588636/
https://www.ncbi.nlm.nih.gov/pubmed/31227738
http://dx.doi.org/10.1038/s41598-019-45218-8

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