Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric mate...

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Detalles Bibliográficos
Autores principales: Saeidi, Ali, Jazaeri, Farzan, Stolichnov, Igor, Enz, Christian C., Ionescu, Adrian M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6591349/
https://www.ncbi.nlm.nih.gov/pubmed/31235799
http://dx.doi.org/10.1038/s41598-019-45628-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6591349/
https://www.ncbi.nlm.nih.gov/pubmed/31235799
http://dx.doi.org/10.1038/s41598-019-45628-8

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