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Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Negative Capacitance (NC) in ferroelectric mate...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6591349/ https://www.ncbi.nlm.nih.gov/pubmed/31235799 http://dx.doi.org/10.1038/s41598-019-45628-8 |