Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and co...

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Detalles Bibliográficos
Autores principales: Balaghi, Leila, Bussone, Genziana, Grifone, Raphael, Hübner, René, Grenzer, Jörg, Ghorbani-Asl, Mahdi, Krasheninnikov, Arkady V., Schneider, Harald, Helm, Manfred, Dimakis, Emmanouil
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6595053/
https://www.ncbi.nlm.nih.gov/pubmed/31243278
http://dx.doi.org/10.1038/s41467-019-10654-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6595053/
https://www.ncbi.nlm.nih.gov/pubmed/31243278
http://dx.doi.org/10.1038/s41467-019-10654-7

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