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Role of Surface Reduction in the Formation of Traps in n-Doped II–VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface
[Image: see text] The efficiency of nanocrystal (NC)-based devices is often limited by the presence of surface states that lead to localized energy levels in the bandgap. Yet, a complete understanding of the nature of these traps remains challenging. Although theoretical modeling has greatly improve...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical
Society
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6595709/ https://www.ncbi.nlm.nih.gov/pubmed/31274957 http://dx.doi.org/10.1021/acs.chemmater.9b01395 |