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Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work, we transplanted this material onto the GaAs substrates in molecular beam epitaxy (MBE). The threading dislocations (TDs) originating from the large lattice mismatch were efficiently suppressed by a...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6600715/ https://www.ncbi.nlm.nih.gov/pubmed/31146381 http://dx.doi.org/10.3390/ma12111743 |