Modulating Band Gap of Boron Doping in Amorphous Carbon Nano-Film

Amorphous carbon (a-C) films are attracting considerable attention to due their large optical band gap (E(opt)) range of 1–4 eV. But the hopping conducting mechanism of boron doping a-C (a-C:B) is still mysterious. To exploring the intrinsic reasons behind the semiconductor properties of a-C:B, in t...

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Detalles Bibliográficos
Autores principales: Zhu, Rui, Tao, Qiang, Lian, Min, Feng, Xiaokang, Liu, Jiayu, Ye, Meiyan, Wang, Xin, Dong, Shushan, Cui, Tian, Zhu, Pinwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6600733/
https://www.ncbi.nlm.nih.gov/pubmed/31159328
http://dx.doi.org/10.3390/ma12111780

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6600733/
https://www.ncbi.nlm.nih.gov/pubmed/31159328
http://dx.doi.org/10.3390/ma12111780

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