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A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices

Spatially resolved current measurements such as scanning photocurrent microscopy (SPCM) have been extensively applied to investigate carrier transport properties in semiconductor nanowires. A traditional simple-exponential-decay formula based on the assumption of carrier diffusion dominance in the s...

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Detalles Bibliográficos
Autores principales: Chu, Cheng-Hao, Mao, Ming-Hua, Yang, Che-Wei, Lin, Hao-Hsiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6603194/
https://www.ncbi.nlm.nih.gov/pubmed/31263209
http://dx.doi.org/10.1038/s41598-019-46020-2