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A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices

Spatially resolved current measurements such as scanning photocurrent microscopy (SPCM) have been extensively applied to investigate carrier transport properties in semiconductor nanowires. A traditional simple-exponential-decay formula based on the assumption of carrier diffusion dominance in the s...

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Detalles Bibliográficos
Autores principales:	Chu, Cheng-Hao, Mao, Ming-Hua, Yang, Che-Wei, Lin, Hao-Hsiung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6603194/ https://www.ncbi.nlm.nih.gov/pubmed/31263209 http://dx.doi.org/10.1038/s41598-019-46020-2

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