Antisymmetric magnetoresistance in van der Waals Fe(3)GeTe(2)/graphite/Fe(3)GeTe(2) trilayer heterostructures

With no requirements for lattice matching, van der Waals (vdW) ferromagnetic materials are rapidly establishing themselves as effective building blocks for next-generation spintronic devices. We report a hitherto rarely seen antisymmetric magnetoresistance (MR) effect in vdW heterostructured Fe(3)Ge...

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Detalles Bibliográficos
Autores principales: Albarakati, Sultan, Tan, Cheng, Chen, Zhong-Jia, Partridge, James G., Zheng, Guolin, Farrar, Lawrence, Mayes, Edwin L. H., Field, Matthew R., Lee, Changgu, Wang, Yihao, Xiong, Yiming, Tian, Mingliang, Xiang, Feixiang, Hamilton, Alex R., Tretiakov, Oleg A., Culcer, Dimitrie, Zhao, Yu-Jun, Wang, Lan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2019
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6611684/
https://www.ncbi.nlm.nih.gov/pubmed/31281884
http://dx.doi.org/10.1126/sciadv.aaw0409

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6611684/
https://www.ncbi.nlm.nih.gov/pubmed/31281884
http://dx.doi.org/10.1126/sciadv.aaw0409

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