Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In(0.53)Ga(0.47)As on 300-mm Si Substrate

This study presents a model to calculate the border trap density (N(bt)) of atomic layer deposition high-k onto In(0.53)Ga(0.47)As on a 300-mm (001) Si substrate. This model considers the quantum confinement effect and band nonparabolicity. Capacitance-equivalent thickness (CET) was used to reflect...

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Detalles Bibliográficos
Autores principales: Rahman, Md. Mamunur, Kim, Jun-Gyu, Kim, Dae-Hyun, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6614368/
https://www.ncbi.nlm.nih.gov/pubmed/31285483
http://dx.doi.org/10.1038/s41598-019-46317-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6614368/
https://www.ncbi.nlm.nih.gov/pubmed/31285483
http://dx.doi.org/10.1038/s41598-019-46317-2

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