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Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In(0.53)Ga(0.47)As on 300-mm Si Substrate
This study presents a model to calculate the border trap density (N(bt)) of atomic layer deposition high-k onto In(0.53)Ga(0.47)As on a 300-mm (001) Si substrate. This model considers the quantum confinement effect and band nonparabolicity. Capacitance-equivalent thickness (CET) was used to reflect...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6614368/ https://www.ncbi.nlm.nih.gov/pubmed/31285483 http://dx.doi.org/10.1038/s41598-019-46317-2 |