Impacts of Cu-Doping on the Performance of La-Based RRAM Devices

In this paper, the effects of Cu insertion layer and rapid thermal annealing on the resistive switching behaviors of La-based resistive switching access memory (RRAM) devices have been investigated. Compared with the undoped control sample (Cu/LaAlO(3)/Pt), the Cu-embedded devices show higher device...

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Detalles Bibliográficos
Autores principales: Wang, Yongte, Liu, Hongxia, Wang, Xing, Zhao, Lu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6617476/
https://www.ncbi.nlm.nih.gov/pubmed/31289960
http://dx.doi.org/10.1186/s11671-019-3064-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6617476/
https://www.ncbi.nlm.nih.gov/pubmed/31289960
http://dx.doi.org/10.1186/s11671-019-3064-1

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