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Revealing the intrinsic nature of the mid-gap defects in amorphous Ge(2)Sb(2)Te(5)
Understanding the relation between the time-dependent resistance drift in the amorphous state of phase-change materials and the localised states in the band gap of the glass is crucial for the development of memory devices with increased storage density. Here a machine-learned interatomic potential...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6624207/ https://www.ncbi.nlm.nih.gov/pubmed/31296874 http://dx.doi.org/10.1038/s41467-019-10980-w |