Strain-stress study of Al(x)Ga(1−x)N/AlN heterostructures on c-plane sapphire and related optical properties

This work presents a systematic study of stress and strain of Al(x)Ga(1−x)N/AlN with composition ranging from GaN to AlN, grown on a c-plane sapphire by metal-organic chemical vapor deposition, using synchrotron radiation high-resolution X-ray diffraction and reciprocal space mapping. The c-plane of...

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Detalles Bibliográficos
Autores principales: Feng, Yining, Saravade, Vishal, Chung, Ting-Fung, Dong, Yongqi, Zhou, Hua, Kucukgok, Bahadir, Ferguson, Ian T., Lu, Na
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6629664/
https://www.ncbi.nlm.nih.gov/pubmed/31308418
http://dx.doi.org/10.1038/s41598-019-46628-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6629664/
https://www.ncbi.nlm.nih.gov/pubmed/31308418
http://dx.doi.org/10.1038/s41598-019-46628-4

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