Pinch-Off Formation in Monolayer and Multilayers MoS(2) Field-Effect Transistors

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS(2)), a transition m...

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Detalles Bibliográficos
Autores principales: Vaknin, Yonatan, Dagan, Ronen, Rosenwaks, Yossi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630314/
https://www.ncbi.nlm.nih.gov/pubmed/31207877
http://dx.doi.org/10.3390/nano9060882

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630314/
https://www.ncbi.nlm.nih.gov/pubmed/31207877
http://dx.doi.org/10.3390/nano9060882

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