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Pinch-Off Formation in Monolayer and Multilayers MoS(2) Field-Effect Transistors

The discovery of layered materials, including transition metal dichalcogenides (TMD), gives rise to a variety of novel nanoelectronic devices, including fast switching field-effect transistors (FET), assembled heterostructures, flexible electronics, etc. Molybdenum disulfide (MoS(2)), a transition m...

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Detalles Bibliográficos
Autores principales:	Vaknin, Yonatan, Dagan, Ronen, Rosenwaks, Yossi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630314/ https://www.ncbi.nlm.nih.gov/pubmed/31207877 http://dx.doi.org/10.3390/nano9060882

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