Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production

Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 9...

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Detalles Bibliográficos
Autores principales: Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, Hashimoto, Tadao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630438/
https://www.ncbi.nlm.nih.gov/pubmed/31207922
http://dx.doi.org/10.3390/ma12121925

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630438/
https://www.ncbi.nlm.nih.gov/pubmed/31207922
http://dx.doi.org/10.3390/ma12121925

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