Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N(2) plasma treated on the silicon nitride is proposed. Experimental results show that the charge lo...

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Detalles Bibliográficos
Autores principales: Yang, Seung-Dong, Jung, Jun-Kyo, Lim, Jae-Gab, Park, Seong-gye, Lee, Hi-Deok, Lee, Ga-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630512/
https://www.ncbi.nlm.nih.gov/pubmed/31146426
http://dx.doi.org/10.3390/mi10060356

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630512/
https://www.ncbi.nlm.nih.gov/pubmed/31146426
http://dx.doi.org/10.3390/mi10060356

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