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Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory
In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N(2) plasma treated on the silicon nitride is proposed. Experimental results show that the charge lo...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630512/ https://www.ncbi.nlm.nih.gov/pubmed/31146426 http://dx.doi.org/10.3390/mi10060356 |