Cargando…
Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide
Strategies are discussed to distinguish interdiffusion and segregation and to measure key parameters such as diffusivities and segregation lengths in semiconductor quantum dots and quantum wells by electron microscopy methods. Spectroscopic methods are usually necessary when the materials systems ar...
Autor principal: | Walther, Thomas |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2019
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630582/ https://www.ncbi.nlm.nih.gov/pubmed/31181748 http://dx.doi.org/10.3390/nano9060872 |
Ejemplares similares
-
Special Issue: Semiconductor Heterostructures (with Quantum Wells, Quantum Dots and Superlattices)
por: Jmerik, Valentin
Publicado: (2022) -
Semiconductor quantum dots
por: Bányai, L
Publicado: (1993) -
Gate control of the electron spin-diffusion length in semiconductor quantum wells
por: Wang, G., et al.
Publicado: (2013) -
Quantum cryptography with highly entangled photons from semiconductor quantum dots
por: Schimpf, Christian, et al.
Publicado: (2021) -
Biosensing with Luminescent Semiconductor Quantum Dots
por: Sapsford, Kim E., et al.
Publicado: (2006)