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Characterization of Al Incorporation into HfO(2) Dielectric by Atomic Layer Deposition
This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO(2) dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO(2) film can stabilize the tetragonal phase of the HfO(2), which helps to achieve a higher die...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630927/ https://www.ncbi.nlm.nih.gov/pubmed/31151234 http://dx.doi.org/10.3390/mi10060361 |