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Characterization of Al Incorporation into HfO(2) Dielectric by Atomic Layer Deposition

This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO(2) dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO(2) film can stabilize the tetragonal phase of the HfO(2), which helps to achieve a higher die...

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Detalles Bibliográficos
Autores principales:	Rahman, Md. Mamunur, Kim, Jun-Gyu, Kim, Dae-Hyun, Kim, Tae-Woo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2019
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6630927/ https://www.ncbi.nlm.nih.gov/pubmed/31151234 http://dx.doi.org/10.3390/mi10060361

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