Design and Investigation of the High Performance Doping-Less TFET with Ge/Si(0.6)Ge(0.4)/Si Heterojunction

A high performance doping-less tunneling field effect transistor with Ge/Si(0.6)Ge(0.4)/Si heterojunction (H-DLTFET) is proposed in this paper. Compared to the conventional doping-less tunneling field effect transistor (DLTFET), the source and channel regions of H-DLTFET respectively use the germani...

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Detalles Bibliográficos
Autores principales: Han, Tao, Liu, Hongxia, Chen, Shupeng, Wang, Shulong, Li, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6631409/
https://www.ncbi.nlm.nih.gov/pubmed/31238602
http://dx.doi.org/10.3390/mi10060424

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6631409/
https://www.ncbi.nlm.nih.gov/pubmed/31238602
http://dx.doi.org/10.3390/mi10060424

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