Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

This paper reports on the direct qualitative and quantitative performance comparisons of the field-effect transistors (FETs) based on vertical gallium nitride nanowires (GaN NWs) with different NW numbers (i.e., 1–100) and diameters (i.e., 220–640 nm) fabricated on the same wafer substrate to prove...

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Detalles Bibliográficos
Autores principales: Fatahilah, Muhammad Fahlesa, Yu, Feng, Strempel, Klaas, Römer, Friedhard, Maradan, Dario, Meneghini, Matteo, Bakin, Andrey, Hohls, Frank, Schumacher, Hans Werner, Witzigmann, Bernd, Waag, Andreas, Wasisto, Hutomo Suryo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6635513/
https://www.ncbi.nlm.nih.gov/pubmed/31311946
http://dx.doi.org/10.1038/s41598-019-46186-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6635513/
https://www.ncbi.nlm.nih.gov/pubmed/31311946
http://dx.doi.org/10.1038/s41598-019-46186-9

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