Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements

The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and three-photon absorption coefficients are measured in the wavelength range between 0.8 µm–1.6 µm, covering the O- to L – telecommunications bands. In the two-photon absorption range, the measured nonlinear...

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Autores principales: Sohn, Byoung-Uk, Choi, Ju Won, Ng, Doris K. T., Tan, Dawn T. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6637241/
https://www.ncbi.nlm.nih.gov/pubmed/31316096
http://dx.doi.org/10.1038/s41598-019-46865-7
_version_ 1783436203660410880
author Sohn, Byoung-Uk
Choi, Ju Won
Ng, Doris K. T.
Tan, Dawn T. H.
author_facet Sohn, Byoung-Uk
Choi, Ju Won
Ng, Doris K. T.
Tan, Dawn T. H.
author_sort Sohn, Byoung-Uk
collection PubMed
description The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and three-photon absorption coefficients are measured in the wavelength range between 0.8 µm–1.6 µm, covering the O- to L – telecommunications bands. In the two-photon absorption range, the measured nonlinear coefficients are compared to theoretically calculated values with a simple parabolic band structure. Two-photon absorption is observed to exist only at wavelengths lower than 1.2 μm. The criterion for all-optical switching through the material is investigated and it is shown that ultra-silicon-rich nitride is a good material in the three-photon absorption region, which spans the entire O- to L- telecommunications bands.
format Online
Article
Text
id pubmed-6637241
institution National Center for Biotechnology Information
language English
publishDate 2019
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-66372412019-07-25 Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements Sohn, Byoung-Uk Choi, Ju Won Ng, Doris K. T. Tan, Dawn T. H. Sci Rep Article The dispersive nonlinear refractive index of ultra-silicon-rich nitride, and its two-photon and three-photon absorption coefficients are measured in the wavelength range between 0.8 µm–1.6 µm, covering the O- to L – telecommunications bands. In the two-photon absorption range, the measured nonlinear coefficients are compared to theoretically calculated values with a simple parabolic band structure. Two-photon absorption is observed to exist only at wavelengths lower than 1.2 μm. The criterion for all-optical switching through the material is investigated and it is shown that ultra-silicon-rich nitride is a good material in the three-photon absorption region, which spans the entire O- to L- telecommunications bands. Nature Publishing Group UK 2019-07-17 /pmc/articles/PMC6637241/ /pubmed/31316096 http://dx.doi.org/10.1038/s41598-019-46865-7 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Sohn, Byoung-Uk
Choi, Ju Won
Ng, Doris K. T.
Tan, Dawn T. H.
Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
title Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
title_full Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
title_fullStr Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
title_full_unstemmed Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
title_short Optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
title_sort optical nonlinearities in ultra-silicon-rich nitride characterized using z-scan measurements
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6637241/
https://www.ncbi.nlm.nih.gov/pubmed/31316096
http://dx.doi.org/10.1038/s41598-019-46865-7
work_keys_str_mv AT sohnbyounguk opticalnonlinearitiesinultrasiliconrichnitridecharacterizedusingzscanmeasurements
AT choijuwon opticalnonlinearitiesinultrasiliconrichnitridecharacterizedusingzscanmeasurements
AT ngdoriskt opticalnonlinearitiesinultrasiliconrichnitridecharacterizedusingzscanmeasurements
AT tandawnth opticalnonlinearitiesinultrasiliconrichnitridecharacterizedusingzscanmeasurements

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